dielectric-semiconductor interface

См. также в других словарях:

• dielectric-semiconductor interface — skiriamasis dielektriko ir puslaidininkio paviršius statusas T sritis radioelektronika atitikmenys: angl. dielectric semiconductor interface vok. Isolator Halbleiter Grenzfläche, f rus. поверхность раздела диэлектрик полупроводник, f pranc.… …   Radioelektronikos terminų žodynas

• interface diélectrique-semi-conducteur — skiriamasis dielektriko ir puslaidininkio paviršius statusas T sritis radioelektronika atitikmenys: angl. dielectric semiconductor interface vok. Isolator Halbleiter Grenzfläche, f rus. поверхность раздела диэлектрик полупроводник, f pranc.… …   Radioelektronikos terminų žodynas

• High-k dielectric — The term high κ dielectric refers to a material with a high dielectric constant (κ) (as compared to silicon dioxide) used in semiconductor manufacturing processes which replaces the silicon dioxide gate dielectric. The implementation of high κ… …   Wikipedia

• Gate dielectric — A gate dielectric is a dielectric used between the gate and substrate of a field effect transistor. In state of the art processes, the gate dielectric is subject to many constraints, including:* Electrically clean interface to the substrate (low… …   Wikipedia

• Isolator-Halbleiter-Grenzfläche — skiriamasis dielektriko ir puslaidininkio paviršius statusas T sritis radioelektronika atitikmenys: angl. dielectric semiconductor interface vok. Isolator Halbleiter Grenzfläche, f rus. поверхность раздела диэлектрик полупроводник, f pranc.… …   Radioelektronikos terminų žodynas

• skiriamasis dielektriko ir puslaidininkio paviršius — statusas T sritis radioelektronika atitikmenys: angl. dielectric semiconductor interface vok. Isolator Halbleiter Grenzfläche, f rus. поверхность раздела диэлектрик полупроводник, f pranc. interface diélectrique semi conducteur, f …   Radioelektronikos terminų žodynas

• поверхность раздела диэлектрик-полупроводник — skiriamasis dielektriko ir puslaidininkio paviršius statusas T sritis radioelektronika atitikmenys: angl. dielectric semiconductor interface vok. Isolator Halbleiter Grenzfläche, f rus. поверхность раздела диэлектрик полупроводник, f pranc.… …   Radioelektronikos terminų žodynas

• MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up …   Wikipedia

• nanotechnology — /nan euh tek nol euh jee, nay neuh /, n. any technology on the scale of nanometers. [1987] * * * Manipulation of atoms, molecules, and materials to form structures on the scale of nanometres (billionths of a metre). These nanostructures typically …   Universalium

• Organic field-effect transistor — OFET based flexible display An organic field effect transistor (OFET) is a field effect transistor using an organic semiconductor in its channel. OFETs can be prepared either by vacuum evaporation of small molecules, by solution casting of… …   Wikipedia

• Schottky barrier — A Schottky barrier is a potential barrier formed at a metal semiconductor junction which has rectifying characteristics, suitable for use as a diode. The largest differences between a Schottky barrier and a p n junction are its typically lower… …   Wikipedia